Journal Article FZJ-2016-00079

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Depth Profiling Charge Accumulation from a Ferroelectric into a Doped Mott Insulator

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2015
ACS Publ. Washington, DC

Nano letters 15(4), 2533 - 2541 () [10.1021/acs.nanolett.5b00104]

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Abstract: The electric field control of functional properties is a crucial goal in oxide-based electronics. Nonvolatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here, we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total-reflection hard X-ray photoemission spectroscopy, and ab initio theory to address this issue. We achieve a direct, quantitative, atomic-scale characterization of the polarization-induced charge density changes at the interface between the ferroelectric BiFeO3 and the doped Mott insulator Ca1–xCexMnO3, thus providing insight on how interface-engineering can enhance these switching effects.

Classification:

Contributing Institute(s):
  1. Elektronische Eigenschaften (PGI-6)
Research Program(s):
  1. 522 - Controlling Spin-Based Phenomena (POF3-522) (POF3-522)

Appears in the scientific report 2015
Database coverage:
Medline ; OpenAccess ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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 Record created 2016-01-05, last modified 2021-01-29