Dissertation / PhD Thesis/Book

PreJuSER-49632

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Fabrication and characterization of planar Gunn diodes for Monolithic Microwave Integrated Circuits

Montanari, S. (Corresponding author)FZJ*

2005
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag Jülich
ISBN: 3-89336-396-3

Please use a persistent id in citations: http://hdl.handle.net/2128/424

Abstract: In the present dissertation, GaAs and GaN Gunn diodes have been investigated with respect to microwave generation in the field of automotive intelligent radar systems. High quality planar Gunn diodes have been fabricated with two different hot electron injectors: a graded gap injector (GGI) and a novel resonant tunneling injector (RTI). Within the framework of the cooperation project between Forschungzentrum Jülich and Robert Bosch GmbH, GGI GaAs Gunn diodes have been studied and optimized. RF evaluation of their performance up to 110 GHz shows the effectiveness of different graded gap injectors. An estimation of the possible operational modes is given for diodes used as microwave generators at 77 GHz, with application in automotive radar systems. A second hot electron injector, the GaAs/AlAs double barrier resonant tunnelling injector has been proposed and designed. GaAs Gunn diodes with RTI have been successfully fabricated and characterized. RTI Gunn diodes present clear evidence of the injector effectiveness both in DC and RF conditions. The design, processing and characterization of a novel GaAs Gunn diode based VCOMMIC$^{1}$ fulfilled the second objective of this work. A simple and straightforward processing technology makes the proposed microwave generator competitive with cavity oscillators and transistor based MMICs.

Note: Record converted from VDB: 12.11.2012
Note: RWTH Aachen, Diss., 2005

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Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005

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Database coverage:

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