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Beurteilung der optischen Eigenschaften von AIGalnP hergestellt in der metaliorganischen Gasphasenepitaxie unter Stickstoff- oder Wasserstoffatmosphäre



1998
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag Jülich

Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Berichte des Forschungszentrums Jülich 3506, III, 81 p. ()

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Report No.: Juel-3506

Abstract: In this work a comparative study on the influence of the carrier gases nitrogen and hydrogen on the optical properties of the III/V-compound AlGaInP grown by metalorganic vapor phase epitaxie is presented. The samples were deposited on GaAs using growth temperatures between 720° C and 780° C. By means of photoluminescence and transmission electron microscopy a clear dependence of the optical properties of AlGaInP on long range ordering of the group-III-sublattice was observed. The hypothesis had to be put forward, that at 2 K three PL-transitions can be found in principle. The behaviour of these emissions was found to depend strongly on the microstructure of the samples, the so called domain structure. An emission in the limelight of the current research, the so called 'moving emission' was indicated to represent a banel of two unresolvable emissions. All in all , it could ascertained that the establishment of longrange order is principally promoted by the carrier gas nitrogen. A larger' halfwidth of the 300 K PL-spectra of the layers, which were grown under nitrogen atmosphere, could be ascribed to a higher degree of order in the layers and not to an inferior cristal quality.

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Note: Record converted from JUWEL: 18.07.2013

Contributing Institute(s):
  1. Institut für Schicht- und Ionentechnik (ISI)

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 Record created 2013-07-18, last modified 2020-06-10


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