Home > Workflow collections > Public records > Beurteilung der optischen Eigenschaften von AIGalnP hergestellt in der metaliorganischen Gasphasenepitaxie unter Stickstoff- oder Wasserstoffatmosphäre |
Report | PreJuSER-136311 |
1998
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
Jülich
Please use a persistent id in citations: http://hdl.handle.net/2128/4417
Report No.: Juel-3506
Abstract: In this work a comparative study on the influence of the carrier gases nitrogen and hydrogen on the optical properties of the III/V-compound AlGaInP grown by metalorganic vapor phase epitaxie is presented. The samples were deposited on GaAs using growth temperatures between 720° C and 780° C. By means of photoluminescence and transmission electron microscopy a clear dependence of the optical properties of AlGaInP on long range ordering of the group-III-sublattice was observed. The hypothesis had to be put forward, that at 2 K three PL-transitions can be found in principle. The behaviour of these emissions was found to depend strongly on the microstructure of the samples, the so called domain structure. An emission in the limelight of the current research, the so called 'moving emission' was indicated to represent a banel of two unresolvable emissions. All in all , it could ascertained that the establishment of longrange order is principally promoted by the carrier gas nitrogen. A larger' halfwidth of the 300 K PL-spectra of the layers, which were grown under nitrogen atmosphere, could be ascribed to a higher degree of order in the layers and not to an inferior cristal quality.
The record appears in these collections: |