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Conference Presentation (Other) FZJ-2013-00801
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The d-DotFET: MOSFET based on locally strained silicon

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2012

9th International Conference on Advanced Semiconductors Devices and Microsystems ASDAM 2012, ASDAM 2012, SmoleniceSmolenice, Slovakia, 11 Nov 2012 - 16 Jan 20132012-11-112013-01-16

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Contributing Institute(s):
  1. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
  2. Halbleiter-Nanoelektronik (PGI-9)
Research Program(s):
  1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2012
Database coverage:
OpenAccess
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Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
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 Record created 2013-01-24, last modified 2021-01-29
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