Journal Article FZJ-2013-00888

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Hall effect measurements on InAs nanowires

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2012
American Institute of Physics Melville, NY

Applied physics letters 101(15), 152106 () [10.1063/1.4759124]

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Abstract: We have processed Hall contacts on InAs nanowires grown by molecular beam epitaxy using an electron beam lithography process with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comparison with those measured by the common field-effect technique. The results are used to evaluate quantitatively the charging effect of the interface and surface states.

Classification:

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
  3. PGI-8-PT (PGI-8-PT)
Research Program(s):
  1. 422 - Spin-based and quantum information (POF2-422) (POF2-422)

Appears in the scientific report 2012
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Medline ; OpenAccess by Allianz-OA ; OpenAccess ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; NationallizenzNationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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Institute Collections > PGI > PGI-9
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 Record created 2013-01-24, last modified 2021-01-29


Published under German "Allianz" Licensing conditions on 2012-10-11. Available in OpenAccess from 2012-10-11:
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