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Journal Article | FZJ-2013-00888 |
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2012
American Institute of Physics
Melville, NY
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Please use a persistent id in citations: http://hdl.handle.net/2128/4965 doi:10.1063/1.4759124
Abstract: We have processed Hall contacts on InAs nanowires grown by molecular beam epitaxy using an electron beam lithography process with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comparison with those measured by the common field-effect technique. The results are used to evaluate quantitatively the charging effect of the interface and surface states.
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