Conference Presentation (Other) FZJ-2013-06471

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SiGeSn Growth Studies using Reduced Pressure CVD Towards Optoelectronic Applications

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2013

The 8th International Conference on Silicon Epitaxy and Heterostructures, ICSI-8, FukuokaFukuoka, Japan, 2 Jun 2013 - 6 Dec 20132013-06-022013-12-06

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Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. Analytik (ZEA-3)
Research Program(s):
  1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013
Database coverage:
OpenAccess
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The record appears in these collections:
Document types > Presentations > Conference Presentations
Institute Collections > ZEA > ZEA-3
Institute Collections > PGI > PGI-9
Workflow collections > Public records
Publications database
Open Access

 Record created 2013-12-16, last modified 2021-01-29


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