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SiGeSn Growth Studies using Reduced Pressure CVD Towards Optoelectronic Applications
Wirths, S. (Corresponding author)FZJ* ; Buca, D. M.FZJ* ; Ikonic, Z. ; Harrison, P. ; Tiedemann, A.FZJ* ; Holländer, B.FZJ* ; Mussler, G.FZJ* ; Breuer, U.ZEA-3*FZJ* ; Grützmacher, D.FZJ* ; Mantl, S.FZJ*
2013
2013The 8th International Conference on Silicon Epitaxy and Heterostructures, ICSI-8, FukuokaFukuoka, Japan, 2 Jun 2013 - 6 Dec 20132013-06-022013-12-06
Please use a persistent id in citations: http://hdl.handle.net/2128/5708
Contributing Institute(s):
- Halbleiter-Nanoelektronik (PGI-9)
- Analytik (ZEA-3)
Research Program(s):
- 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)
Appears in the scientific report
2013
Database coverage: