Multistage nucleation of two-dimensional Si islands on Si(111)-7x7 during MBE growth: STM experiments and extended rate-equation model

Filimonov, S.; Voigtländer, B.; Hervieu, Y.; Cherepanov, V.

doi:10.1103/PhysRevB.76.035428

Journal Article

Multistage nucleation of two-dimensional Si islands on Si(111)-7x7 during MBE growth: STM experiments and extended rate-equation model

Filimonov, S.FZJ* ; Cherepanov, V.FZJ* ; Hervieu, Y. ; Voigtländer, B.FZJ*

2007
APS College Park, Md.

Physical review / B 76(3), 035428 (2007) [10.1103/PhysRevB.76.035428]

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Please use a persistent id in citations: http://hdl.handle.net/2128/7738 doi:10.1103/PhysRevB.76.035428

Abstract: The submonolayer density of two-dimensional (2D) islands in Si/Si(111)-7x7 molecular beam epitaxy is measured using scanning tunneling microscopy. At a relatively low deposition temperature of 673 K, the density of 2D islands is a power function of the deposition flux N-2D proportional to F-chi with the exponent chi=0.24 being smaller than that predicted by the standard nucleation theory. The nonstandard scaling of the 2D island density is explained by the multistage character of the nucleation process on the Si(111)-7x7 surface which involves consecutive stages of formation of stable Si clusters, formation of pairs of clusters, and transformation of the cluster pairs to 2D islands. Using an extended rate-equation model, we analyze the temperature and growth rate dependencies of the density of single clusters, cluster pairs, and 2D islands and show that an activation barrier of similar to 1.26 eV delays the transformation of cluster pairs to 2D islands. The delayed transformation of cluster pairs to 2D islands is the reason for the nonstandard scaling of the 2D island density observed at low deposition temperatures.

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