Silicon p+n junction detectors irradiated with fast neutron fluences up to 10(13) n/cm2 have been measured using the thermally stimulated current (TSC) technique. Defect complexes revealed in irradiated silicon by this experimental analysis are presented. A new peak, which can be explained using a cluster model, is observed when a forward filling voltage is applied to the samples during the measurement. A brief report on the changes in electrical parameters (leakage current and effective free charged carrier concentration) after irradiation is included.
Defect complexes in neutron irradiated silicon detectors: evaluation and effects / M. Bruzzi;A. Baldini;E. Borchi;I. Lukianov. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 326:(1993), pp. 344-349. [10.1016/0168-9002(93)90375-R]
Defect complexes in neutron irradiated silicon detectors: evaluation and effects
BRUZZI, MARA;BORCHI, EMILIO;
1993
Abstract
Silicon p+n junction detectors irradiated with fast neutron fluences up to 10(13) n/cm2 have been measured using the thermally stimulated current (TSC) technique. Defect complexes revealed in irradiated silicon by this experimental analysis are presented. A new peak, which can be explained using a cluster model, is observed when a forward filling voltage is applied to the samples during the measurement. A brief report on the changes in electrical parameters (leakage current and effective free charged carrier concentration) after irradiation is included.
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