We study the multiexciton properties of GaAs quantum dots self aggregated on Si substrates. Sequential emission of two photons radiative cascade is observed both in continuous wave and in time resolved measurements. Polarization resolved measurements, with high spectral resolution, allow us to attribute the observed photon cascade to positively charged biexciton. Our results highlight the possibility of obtaining systems showing quantum correlations on a Si based device.
Kinetics of multiexciton complex in GaAs quantum dots on Si / N. Accanto;S. Minari;L. Cavigli;S. Bietti;G. Isella;A. Vinattieri;S. Sanguinetti;M. Gurioli. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 102:(2013), pp. 053109-1-053109-5. [10.1063/1.4790148]
Kinetics of multiexciton complex in GaAs quantum dots on Si
CAVIGLI, LUCIA;VINATTIERI, ANNA;GURIOLI, MASSIMO
2013
Abstract
We study the multiexciton properties of GaAs quantum dots self aggregated on Si substrates. Sequential emission of two photons radiative cascade is observed both in continuous wave and in time resolved measurements. Polarization resolved measurements, with high spectral resolution, allow us to attribute the observed photon cascade to positively charged biexciton. Our results highlight the possibility of obtaining systems showing quantum correlations on a Si based device.
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