Article (Scientific journals)
Strained silicon-on-insulator - Fabrication and characterization
Reiche, M.; Himcinschi, C.; Gösele, U. et al.
2007In ECS Transactions, 6, p. 339
Peer reviewed
 

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Keywords :
Strained silicon-on-insulator; Growth
Abstract :
[en] SSOI substrates were successfully fabricated using He+ ion implantation and annealing to relax thin (< 500nm) SiGe buffer layers, bonding and layer transfer processes to realize strained-Si layers onto oxide layers. The reduced thickness of the SiGe buffer possess numerous advantages such as reduced process costs for epitaxy and for reclaim of the handle wafer if the layer splitting is initiated in the SiGe/Si interface. The electron mobilities in the fabricated SSOI layers were measured using transistors with different gate lengths. An electron mobility of ~530 cm2 /Vs was extracted, being much higher than in non-strained SOI substrates. Furthermore, an 80% drive current (IDSAT) improvement has been measured for long channel devices.
Disciplines :
Electrical & electronics engineering
Author, co-author :
Reiche, M.;  Max Planck Institut for Microstructure Physics
Himcinschi, C.;  Max Planck Institut for Microstructure Physics
Gösele, U.;  Max Planck Institut for Microstructure Physics
Christiansen, S.;  Max Planck Institut for Microstructure Physics
Mantl, S.;  Research Center Jülich > Institute of Bio- and Nanosystems
Buca, D.;  Research Center Jülick > Institute of Bio- and Nanosystems
Zhao, Q. T.;  Research Center Jülich > Institute of Bio- and Nanosystems
Feste, S.;  Research Center Jülich > Institute of Bio- and Nanosystems
Loo, R.;  IMEC
Nguyen, Ngoc Duy  ;  IMEC
Buchholtz, W.;  AMD Saxony LLC & Co. KG
Wei, A.;  AMD Saxony LLC & Co. KG
Horstmann, M.;  AMD Saxony LLC & Co. KG
Feijoo, D.;  Siltronic AG
Storck, P.;  Siltronic AG
More authors (5 more) Less
Language :
English
Title :
Strained silicon-on-insulator - Fabrication and characterization
Publication date :
2007
Journal title :
ECS Transactions
ISSN :
1938-5862
eISSN :
1938-6737
Publisher :
ECS, Pennington, United States
Volume :
6
Pages :
339
Peer reviewed :
Peer reviewed
Available on ORBi :
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