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JApplPhys_90_824.pdf | 78.68 kB | Adobe PDF | 見る/開く |
タイトル: | Energetics of native defects in ZnO |
著者: | Oba, Fumiyasu Nishitani, shigeto R Isotani, Seiji Adachi, Hirohiko Tanaka, Isao https://orcid.org/0000-0002-4616-118X (unconfirmed) |
発行日: | 15-Jul-2001 |
出版者: | American Institute of Physics |
誌名: | JOURNAL OF APPLIED PHYSICS |
巻: | 90 |
号: | 2 |
開始ページ: | 824 |
終了ページ: | 828 |
抄録: | We have investigated the formation energies and electronic structure of native defects in ZnO by a first-principles plane-wave pseudopotential method. When p-type conditions are assumed, the formation energies of donor-type defects can be quite low. The effect of self-compensation by the donor-type defects should be significant in p-type doping. Under n-type conditions, the oxygen vacancy exhibits the lowest formation energy among the donor-type defects. The electronic structure, however, implies that only the zincinterstitial or the zinc antisite can explain the n-type conductivity of undoped ZnO. |
著作権等: | Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
URI: | http://hdl.handle.net/2433/39701 |
DOI(出版社版): | 10.1063/1.1380994 |
出現コレクション: | 学術雑誌掲載論文等 |
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