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https://hdl.handle.net/2440/2444
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Type: | Journal article |
Title: | Optical MTF and quantum efficiency analysis in a finite slab |
Author: | Abbott, D. |
Citation: | Microelectronics Journal, 2002; 33(1-2):161-170 |
Publisher: | Elsevier Advanced Technology |
Issue Date: | 2002 |
ISSN: | 0026-2692 |
Abstract: | The formula for quantum efficiency in a semiconducting material was first derived by Seib in 1974 for a semi-infinite slab of semiconducting material. Seib's first-order analysis considered the effect of absorption coefficient, minority carrier diffusion length and depletion width. However, for modern devices on epitaxial material, smart sensors, quantum well devices, etc., the semi-infinite slab approximation breaks down. Here, we present the derivation for a finite slab that considers the thickness of the layer as a fourth parameter. We present a case study analyzing quantum efficiency, and hence MTF, in epitaxial silicon versus bulk gallium arsenide. |
Keywords: | Internal quantum efficiency Modulation transfer function Optical image sensors Optical smart sensors Photodetection |
DOI: | 10.1016/S0026-2692(01)00115-X |
Description (link): | http://www.elsevier.com/wps/find/journaldescription.cws_home/405904/description#description |
Published version: | http://dx.doi.org/10.1016/s0026-2692(01)00115-x |
Appears in Collections: | Aurora harvest 6 Electrical and Electronic Engineering publications |
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