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Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor
http://hdl.handle.net/10091/00018600
http://hdl.handle.net/10091/0001860085ad7eae-bedb-4cb0-9a81-71d072f7a39e
名前 / ファイル | ライセンス | アクション |
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Influence_Ge_composition_Cu2Sn1-xGexS3_thin-film.pdf (11.9 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2016-02-03 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor | |||||
言語 | ||||||
言語 | eng | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.solmat.2015.04.030 | |||||
関連名称 | 10.1016/j.solmat.2015.04.030 | |||||
キーワード | ||||||
主題 | Cu2Sn1-xGexS3, Sulfurization, Thin film, Raman spectrum, Compound semiconductor, Solar cell | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Myo, Than Htay
× Myo, Than Htay× Mandokoro, Takahiro× Seki, Hiroaki× Sakaizawa, Takanori× Momose, Noritaka× Taishi, Toshinori× Hashimoto, Yoshio× Ito, Kentaro |
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信州大学研究者総覧へのリンク | ||||||
氏名 | Myo, Than Htay | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.ZpTFbpkh.html | |||||
信州大学研究者総覧へのリンク | ||||||
氏名 | Taishi, Toshinori | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html | |||||
信州大学研究者総覧へのリンク | ||||||
氏名 | Hashimoto, Yoshio | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.gUTUZVkh.html | |||||
出版者 | ||||||
出版者 | ELSEVIER SCIENCE BV | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | SOLAR ENERGY MATERIALS AND SOLAR CELLS. 140:312-319 (2015) | |||||
書誌情報 |
SOLAR ENERGY MATERIALS AND SOLAR CELLS 巻 140, p. 312-319, 発行日 2015-09 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Cu2Sn1-xGexS3 thin-film absorbers are prepared by sulfurization of laminated precursors. The crystal grain size is enhanced under higher growth temperature and/or sulfur pressure. By the XRD and Raman analyses, the crystal alloy is considered to be composed of majority monoclinic phase with minority secondary phase such as Cu-2(Sn1-xGex)(3)S-7 throughout the whole Ge/(Ge+Sn) composition range. The optical band gap is observed to be varied between 0.94 eV and 1.30 eV in relation with the Ge contents. A photovoltaic conversion efficiency of about 2% is obtained in the sample utilizing Cu2Sn0.6Ge0.4S3 absorber. (C) 2015 Elsevier B.V. All rights reserved. | |||||
資源タイプ(コンテンツの種類) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0927-0248 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10827286 | |||||
権利 | ||||||
権利情報 | © 2015. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
WoS | ||||||
表示名 | Web of Science | |||||
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