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Title: | Raman scattering investigation of twisted WS2/MoS2 heterostructures : interlayer mechanical coupling versus charge transfer | Authors: | Wu, Lishu Cong, Chunxiao Shang, Jingzhi Yang, Weihuang Chen, Yu Zhou, Jiadong Ai, Wei Wang, Yanlong Feng, Shun Zhang, Hongbo Liu, Zheng Yu, Ting |
Keywords: | Science::Physics::Optics and light Engineering::Materials::Photonics and optoelectronics materials |
Issue Date: | 2021 | Source: | Wu, L., Cong, C., Shang, J., Yang, W., Chen, Y., Zhou, J., Ai, W., Wang, Y., Feng, S., Zhang, H., Liu, Z. & Yu, T. (2021). Raman scattering investigation of twisted WS2/MoS2 heterostructures : interlayer mechanical coupling versus charge transfer. Nano Research. https://dx.doi.org/10.1007/s12274-020-3193-y | Project: | MOE Tier 1 RG93/19 NRF-CRP-21-2018-0007 MOE2018-T2-2-072 MOE2019-T2-1-004 |
Journal: | Nano Research | Abstract: | Twisted van der Waals homo- and hetero-structures have aroused great attentions due to their unique physical properties, providing a new platform to explore the novel two-dimensional (2D) condensed matter physics. The robust dependence of phonon vibrations and electronic band structures on the twist angle has been intensively observed in transition metal dichalcogenide (TMD) homo-structures. However, the effects of twist angle on the lattice vibrational properties in the TMD heterostructures have not caused enough attention. Here, we report the distinct evolutions of Raman scattering and the underlying interlayer interactions in the twisted WS2/MoS2 heterostructures. The shifts and linewidths of E2g(Γ) and A1g(Γ) phonon modes are found to be twist angle dependent. In particular, analogous to that of the twisted TMD homostructures, the frequency separations between E2g(Γ) and A1g(Γ) modes of MoS2 and WS2 in the twisted heterostructures varying with twist angle correlate with the interlayer mechanical coupling, essentially originating from the spacing-related repulsion between sulfur atoms. Moreover, the opposite shift behaviors and broadening of A1g(Γ) modes caused by charge transfer are also observed in the twisted heterostructures. The calculated interlayer distances and band alignment of twisted WS2/MoS2 through density functional theory further evidence our interpretations on the roles of the interlayer mechanical coupling and charge transfer in variations of Raman features. Such understanding and controlling of interlayer interaction through the stacking orientation are significant for future optoelectronic device design based on the newly emerged 2D heterostructures. [Figure not available: see fulltext.] | URI: | https://hdl.handle.net/10356/146821 | ISSN: | 1998-0124 | DOI: | 10.1007/s12274-020-3193-y | Schools: | School of Physical and Mathematical Sciences School of Materials Science and Engineering |
Departments: | Division of Physics and Applied Physics | Rights: | © 2020 Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature. All rights reserved. This paper was published in Nano Research and is made available with permission of Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | SPMS Journal Articles |
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Raman scattering investigation of twisted WS2MoS2 heterostructures interlayer mechanical coupling versus charge transfer.pdf | 2.96 MB | Adobe PDF | View/Open |
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