[EN]Switching diode (SSD) structure on SiC, designed using
Monte Carlo simulations, for the fabrication of nano-scale SSDs to
reach THz emission as a result of Gunn oscillations. Crack-free
epistructure with good epi-characteristics and uniformity on 2-
inch SiC substrate was achieved. High carrier density of 2 ×1018
cm-3 resulted in a low contact resistance of 0.35 Ω.mm.
