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Carrier conduction mechanism for Phosphorescent materials doped organic semiconductor
Cited 46 time in
Web of Science
Cited 47 time in Scopus
- Authors
- Issue Date
- 2009
- Publisher
- American Institute of Physics
- Citation
- J. Appl. Phys. 105, 033709
- Abstract
- The mobility of charge carriers has been investigated in the pristine and phosphorescent material
doped 4,4 ,4 -tris N-carbazolyl triphenylamine TCTA using time-of-flight photoconductivity
technique. Doping phosphorescent material fac-tris 2-phenylpyridine iridium Ir ppy 3 increases
the electron mobility whereas the hole mobility decreases to the order of 10−4–10−6 cm2 /V s
measured at room temperature with different bias voltages. The analysis of field and temperature
dependences of the mobility agrees well with the Gaussian disorder model. The calculated positional
disorders for TCTA, Ir ppy 3-doped TCTA, and tris 1-phenylisoquinoline iridium Ir piq 3
-doped TCTAare 0.12, 2.05, and 1.62 for hole, respectively; 3.89 for electron in only Ir ppy 3-doped
TCTA. The ambipolar transport for holes and electrons is possible by doping TCTA with Ir ppy 3
green dopant whereas only hole transport with reduced mobility is achieved for Ir piq 3 red
dopant .
- ISSN
- 0021-8979
- Language
- English
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