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Capacitance–Voltage Characterization of Tunnel Field Effect Transistors with a Si/SiGe Heterojunction : Si/SiGe 헤테로 접합을 가지는 터널링 전계효과 트랜지스터의 전기 용량 특성
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- Authors
- Advisor
- 박병국
- Major
- 공과대학 전기·정보공학부
- Issue Date
- 2017-08
- Publisher
- 서울대학교 대학원
- Keywords
- Tunnel Field Effect Transistor ; Threshold Voltage ; Apparent Carrier Concentration ; Capacitance ; Si Capping Layer ; Centroid.
- Description
- 학위논문 (석사)-- 서울대학교 대학원 공과대학 전기·정보공학부, 2017. 8. 박병국.
- Abstract
- A Si capping layer on a SiGe channel is essential to improve the interface properties between the SiGe channel and the gate insulator. Thus, devices with a Si capping layer should be analyzed to understand their electrical characteristics. In this thesis, a strained Si/SiGe heterojunction TFET is investigated via capacitance–voltage measurements, which are rapid and non-destructive. The C–V analysis method in a strained Si/SiGe heterojunction TFET is improved through TCAD simulations. Through a C–V analysis, important parameters pertaining to devices, such as the layer thicknesses and threshold voltages, can be extracted.
- Language
- English
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