Publications
Detailed Information
Hydride Vapor Phase Epitaxy를 이용한 GaN 후막증착과 극성이 결정성장에 미치는 영향 : Hydride Vapor Phase Epitaxy of GaN thick films and polarity effects on crystal growth
Cited 0 time in
Web of Science
Cited 0 time in Scopus
- Authors
- Advisor
- 정수진
- Issue Date
- 2002
- Publisher
- 서울대학교 대학원
- Keywords
- GaN ; Defect Structure ; HVPE ; Crystal Polarity ; 결함구조 ; 결정 극성
- Description
- 학위논문(박사)--서울대학교 대학원 :재료공학부,2002.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000063193
https://hdl.handle.net/10371/35404
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.