Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride

Ngoc My Duong, H; Nguyen, MAP; Kianinia, M; Ohshima, T; Abe, H; Watanabe, K; Taniguchi, T; Edgar, JH; Aharonovich, I; Toth, M

Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride

Ngoc My Duong, H Nguyen, MAP Kianinia, M Ohshima, T Abe, H Watanabe, K Taniguchi, T Edgar, JH Aharonovich, I

Toth, M

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Publication Type:: Journal Article
Citation:: ACS Applied Materials and Interfaces, 2018, 10 (29), pp. 24886 - 24891
Issue Date:: 2018-07-25

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Field	Value	Language
dc.contributor.author	Ngoc My Duong, H	en_US
dc.contributor.author	Nguyen, MAP	en_US
dc.contributor.author	Kianinia, M	en_US
dc.contributor.author	Ohshima, T	en_US
dc.contributor.author	Abe, H	en_US
dc.contributor.author	Watanabe, K	en_US
dc.contributor.author	Taniguchi, T	en_US
dc.contributor.author	Edgar, JH	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.date.available	2020-05-25T19:17:55Z
dc.date.issued	2018-07-25	en_US
dc.identifier.citation	ACS Applied Materials and Interfaces, 2018, 10 (29), pp. 24886 - 24891	en_US
dc.identifier.issn	1944-8244	en_US
dc.identifier.uri	http://hdl.handle.net/10453/130276
dc.description.abstract	© 2018 American Chemical Society. Hexagonal boron nitride (hBN) mono and multilayers are promising hosts for room-temperature single photon emitters (SPEs). In this work we explore high-energy (∼MeV) electron irradiation as a means to generate stable SPEs in hBN. We investigate four types of exfoliated hBN flakes - namely, high-purity multilayers, isotopically pure hBN, carbon-rich hBN multilayers and monolayered material - and find that electron irradiation increases emitter concentrations dramatically in all samples. Furthermore, the engineered emitters are located throughout hBN flakes (not only at flake edges or grain boundaries) and do not require activation by high-temperature annealing of the host material after electron exposure. Our results provide important insights into controlled formation of hBN SPEs and may aid in identification of their crystallographic origin.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP140102721
dc.relation	http://purl.org/au-research/grants/arc/DP180100077
dc.relation	http://purl.org/au-research/grants/arc/LP170100150
dc.relation.ispartof	ACS Applied Materials and Interfaces	en_US
dc.relation.isbasedon	10.1021/acsami.8b07506	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride	en_US
dc.type	Journal Article
utslib.citation.volume	29	en_US
utslib.citation.volume	10	en_US
utslib.for	0904 Chemical Engineering	en_US
utslib.for	0303 Macromolecular and Materials Chemistry	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	open_access
pubs.issue	29	en_US
pubs.publication-status	Published	en_US
pubs.volume	10	en_US

Abstract:

© 2018 American Chemical Society. Hexagonal boron nitride (hBN) mono and multilayers are promising hosts for room-temperature single photon emitters (SPEs). In this work we explore high-energy (∼MeV) electron irradiation as a means to generate stable SPEs in hBN. We investigate four types of exfoliated hBN flakes - namely, high-purity multilayers, isotopically pure hBN, carbon-rich hBN multilayers and monolayered material - and find that electron irradiation increases emitter concentrations dramatically in all samples. Furthermore, the engineered emitters are located throughout hBN flakes (not only at flake edges or grain boundaries) and do not require activation by high-temperature annealing of the host material after electron exposure. Our results provide important insights into controlled formation of hBN SPEs and may aid in identification of their crystallographic origin.

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http://hdl.handle.net/10453/130276