Optical properties of implanted Xe color centers in diamond

Sandstrom, R; Ke, L; Martin, A; Wang, Z; Kianinia, M; Green, B; Gao, WB; Aharonovich, I

Optical properties of implanted Xe color centers in diamond

Sandstrom, R Ke, L Martin, A Wang, Z Kianinia, M Green, B Gao, WB Aharonovich, I

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Publication Type:: Journal Article
Citation:: Optics Communications, 2018, 411 pp. 182 - 186
Issue Date:: 2018-03-15

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Field	Value	Language
dc.contributor.author	Sandstrom, R	en_US
dc.contributor.author	Ke, L	en_US
dc.contributor.author	Martin, A	en_US
dc.contributor.author	Wang, Z	en_US
dc.contributor.author	Kianinia, M	en_US
dc.contributor.author	Green, B	en_US
dc.contributor.author	Gao, WB	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.date.issued	2018-03-15	en_US
dc.identifier.citation	Optics Communications, 2018, 411 pp. 182 - 186	en_US
dc.identifier.issn	0030-4018	en_US
dc.identifier.uri	http://hdl.handle.net/10453/130767
dc.description.abstract	© 2017 Elsevier B.V. Optical properties of color centers in diamond have been the subject of intense research due to their promising applications in quantum photonics. In this work we study the optical properties of Xe related color centers implanted into nitrogen rich (type IIA) and an ultrapure, electronic grade diamond. The Xe defect has two zero phonon lines at ∼794 nm and 811 nm, which can be effectively excited using both green and red excitation, however, its emission in the nitrogen rich diamond is brighter. Near resonant excitation is performed at cryogenic temperatures and luminescence is probed under strong magnetic field. Our results are important towards the understanding of the Xe related defect and other near infrared color centers in diamond.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DE130100592
dc.relation.ispartof	Optics Communications	en_US
dc.relation.isbasedon	10.1016/j.optcom.2017.11.064	en_US
dc.subject.classification	Optoelectronics & Photonics	en_US
dc.title	Optical properties of implanted Xe color centers in diamond	en_US
dc.type	Journal Article
utslib.citation.volume	411	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
utslib.for	1005 Communications Technologies	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US
pubs.volume	411	en_US

Abstract:

© 2017 Elsevier B.V. Optical properties of color centers in diamond have been the subject of intense research due to their promising applications in quantum photonics. In this work we study the optical properties of Xe related color centers implanted into nitrogen rich (type IIA) and an ultrapure, electronic grade diamond. The Xe defect has two zero phonon lines at ∼794 nm and 811 nm, which can be effectively excited using both green and red excitation, however, its emission in the nitrogen rich diamond is brighter. Near resonant excitation is performed at cryogenic temperatures and luminescence is probed under strong magnetic field. Our results are important towards the understanding of the Xe related defect and other near infrared color centers in diamond.

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http://hdl.handle.net/10453/130767