Electron beam controlled restructuring of luminescence centers in polycrystalline diamond

Zachreson, C; Martin, AA; Aharonovich, I; Toth, M

Electron beam controlled restructuring of luminescence centers in polycrystalline diamond

Zachreson, C

Martin, AA

Aharonovich, I

Toth, M

Permalink

Publication Type:: Journal Article
Citation:: ACS Applied Materials and Interfaces, 2014, 6 (13), pp. 10367 - 10372
Issue Date:: 2014-07-09

Open Access

Copyright Clearance Process

Recently Added
In Progress
Open Access

This item is open access.

Adobe PDF

Download Accepted Manuscript VersionAdobe PDF (1.46 MB)

View on publisher's site

View statistics

Full metadata record

Field	Value	Language
dc.contributor.author	Zachreson, C https://orcid.org/0000-0002-0578-4049	en_US
dc.contributor.author	Martin, AA https://orcid.org/0000-0003-2362-5524	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.date.issued	2014-07-09	en_US
dc.identifier.citation	ACS Applied Materials and Interfaces, 2014, 6 (13), pp. 10367 - 10372	en_US
dc.identifier.issn	1944-8244	en_US
dc.identifier.uri	http://hdl.handle.net/10453/42017
dc.description.abstract	Color centers in diamond are becoming prime candidates for applications in photonics and sensing. In this work we study the time evolution of cathodoluminescence (CL) emissions from color centers in a polycrystalline diamond film under electron irradiation. We demonstrate room-temperature activation of several luminescence centers through a thermal mechanism that is catalyzed by an electron beam. CL activation kinetics were measured in realtime and are discussed in the context of electron induced dehydrogenation of nitrogen-vacancy-hydrogen clusters and dislocation defects. Our results also show that (unintentional) electron beam induced chemical etching can take place during CL analysis of diamond. The etching is caused by residual H2O molecules present in high vacuum CL systems. © 2014 American Chemical Society.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP140102721
dc.relation	http://purl.org/au-research/grants/arc/DE130100592
dc.relation.ispartof	ACS Applied Materials and Interfaces	en_US
dc.relation.isbasedon	10.1021/am501865t	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Electron beam controlled restructuring of luminescence centers in polycrystalline diamond	en_US
dc.type	Journal Article
utslib.citation.volume	13	en_US
utslib.citation.volume	6	en_US
utslib.for	0303 Macromolecular and Materials Chemistry	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	open_access
pubs.issue	13	en_US
pubs.publication-status	Published	en_US
pubs.volume	6	en_US

Abstract:

Color centers in diamond are becoming prime candidates for applications in photonics and sensing. In this work we study the time evolution of cathodoluminescence (CL) emissions from color centers in a polycrystalline diamond film under electron irradiation. We demonstrate room-temperature activation of several luminescence centers through a thermal mechanism that is catalyzed by an electron beam. CL activation kinetics were measured in realtime and are discussed in the context of electron induced dehydrogenation of nitrogen-vacancy-hydrogen clusters and dislocation defects. Our results also show that (unintentional) electron beam induced chemical etching can take place during CL analysis of diamond. The etching is caused by residual H2O molecules present in high vacuum CL systems. © 2014 American Chemical Society.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/42017