High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

Abstract
The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.

Citation
Zhao C, Ng T, Wei N, Janjua B, ElAfandy RT, et al. (2016) High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics. Asia Communications and Photonics Conference 2016. Available: http://dx.doi.org/10.1364/acpc.2016.as1f.6.

Acknowledgements
The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).

Publisher
The Optical Society

Journal
Asia Communications and Photonics Conference 2016

Conference/Event Name
Asia Communications and Photonics Conference, ACPC 2016

DOI
10.1364/acpc.2016.as1f.6

Additional Links
https://www.osapublishing.org/abstract.cfm?URI=ACPC-2016-AS1F.6

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