A 183 GHz metamorphic HEMT low-noise amplifier with 3.5 dB noise figure
Ver/ Abrir
Registro completo
Mostrar el registro completo DCAutoría
Moschetti, Giuseppe; Leuther, Arnulf; Maßler, Herman; Aja Abelán, Beatriz; Rösch, Markus; Schlechtweg, Michael; Ambacher, Oliver; Kangas, Ville; Perichaud, Marie GenevièveFecha
2015-09Derechos
© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Publicado en
IEEE Microwave and Wireless Components Letters, 2015, 25(9), 618-620
Editorial
Institute of Electrical and Electronics Engineers Inc.
Enlace a la publicación
Palabras clave
G-band
Low-noise amplifiers (LNAs)
Metamorphic high electron mobility transistor (mHEMT)
Monolithic microwave integrated circuit (MMIC)
Resumen/Abstract
This paper presents a 183 GHz low-noise amplifier (LNA), designed primarly for water vapor detection in atmosphere. The LNA requirements were defined by MetOp Second Generation (MetOp-SG) Microwave Sounder, Microwave Imager and Ice Cloud Imager instruments. MetOp-SG is the European contribution to operational meteorological observations from polar orbit. This LNA advances the current state-of-the-art for the InGaAs metamorphic high electron
mobility transistor (mHEMT) technology. The five-stage common-source MMIC amplifier utilizes transistors with a gate length of 50 nm. On-wafer measurements show a noise figure of 3.5 dB at the operative frequency, about 1 dB lower than previously reported mHEMT LNAs, and a gain of 24±2 dB over the bandwidth 160-200 GHz. The input and output matching are -11 dB and -10 dB, respectively. Moreover, the DC power dissipation at the optimal bias for noise is as low as 24 mW.
Colecciones a las que pertenece
- D12 Artículos [329]