Evolution of the Raman 2D’ mode in monolayer graphene during electrochemical doping

0559108 - ÚFCH JH 2023 RIV US eng J - Článek v odborném periodiku
Melníková Komínková, Zuzana - Valeš, Václav - Frank, Otakar - Kalbáč, Martin
Evolution of the Raman 2D’ mode in monolayer graphene during electrochemical doping.
Microchemical Journal. Roč. 181, OCT 2022 (2022), č. článku 107739. ISSN 0026-265X. E-ISSN 1095-9149
Grant CEP: GA ČR(CZ) GX20-08633X; GA MŠMT EF16_026/0008382
Grant ostatní: Ministerstvo školství, mládeže a tělovýchovy - GA MŠk(CZ) CZ.02.1.01/0.0/0.0/16_026/0008382
Institucionální podpora: RVO:61388955
Klíčová slova: 2D’ mode * Graphene * In-situ spectroelectrochemistry * Raman spectroscopy
Obor OECD: Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)
Impakt faktor: 4.8, rok: 2022
Způsob publikování: Omezený přístup

Effective charge doping and control of the Fermi level shift is a crucial aspect in graphene device fabrication. Raman spectroscopy is extensively used for primary characterization of such samples, however, quantification of carrier concentration using the known G-2D vector analysis can pose problems when more sources of phonon renormalization are present, for example lattice deformation or disorder. In such cases, analysis of another Raman mode can provide the needed missing information. In this study, chemical vapor-deposition-grown single-layer graphene was monitored by in-situ Raman spectroelectrochemistry with the focus on the behavior of the 2D’ mode upon the application of electrochemical potential. We analyzed the changes of the Raman peak intensity, frequency and linewidth of the 2D’ mode as a function of electrode potential in detail and compared the obtained results with well-known behavior of the G and 2D modes during electrochemical doping.
Trvalý link: https://hdl.handle.net/11104/0332528