Advances in RF glow discharge optical emission spectrometry characterization of intrinsic and boron-doped diamond coatings

0561905 - FZÚ 2023 RIV US eng J - Článek v odborném periodiku
Sharma, Dhananjay K. - Girao, A.V. - Chapon, P. - Neto, M.A. - Oliveira, F.J. - Silva, R.F.
Advances in RF glow discharge optical emission spectrometry characterization of intrinsic and boron-doped diamond coatings.
ACS Applied Materials and Interfaces. Roč. 14, č. 5 (2022), s. 7405-7416. ISSN 1944-8244. E-ISSN 1944-8252
Grant CEP: GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760; AV ČR(CZ) CSIR-21-04
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: GD-OES * diamond * boron doping * XPS * Rietveld refinement * Raman spectroscopy * HFCVD
Obor OECD: Fluids and plasma physics (including surface physics)
Impakt faktor: 9.5, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1021/acsami.1c20785

Accurate determination of the effective doping range within diamond thin films is important for fine-tuning of electrical conductivity. Nevertheless, it is not easily attainable by the commonly adopted techniques. In this work, pulsed RF glow discharge optical emission spectrometry (GD-OES) combined with ultrafast sputtering (UFS) is applied for the first time to acquire elemental depth profiles of intrinsic diamond coatings and boron content bulk distribution in films. The GD-OES practical advances presented here enabled quick elemental profiling with noteworthy depth resolution and determination of the film interfaces. The erosion rates and layer thicknesses were measured using differential interferometric profiling (DIP), demonstrating a close correlation between the coating thickness and the carbon/hydrogen gas ratio.
Trvalý link: https://hdl.handle.net/11104/0334341