Effects of metal layers on chemical vapor deposition of diamond films

0564910 - FZÚ 2023 RIV SK eng J - Článek v odborném periodiku
Izsák, T. - Vanko, G. - Babčenko, Oleg - Zaťko, B. - Kromka, Alexander
Effects of metal layers on chemical vapor deposition of diamond films.
Journal of Electrical Engineering - Elektrotechnický časopis. Roč. 73, č. 5 (2022), s. 350-354. ISSN 1335-3632. E-ISSN 1339-309X
Grant CEP: GA MŠMT LM2018110; GA MŠMT(CZ) LUASK22147
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * CVD * metallization * iridium * raman * SEM
Obor OECD: Electrical and electronic engineering
Impakt faktor: 0.8, rok: 2022
Způsob publikování: Open access

Here, we present the influence of thin metal (Ni, Ir, Au) layers on diamond growth by MWCVD employing two different concepts. In the first concept, a flat substrate (GaN) was initially coated with a thin metal layer, then exposed to the MWCVD process. In the second concept, the diamond film was firstly formed, then it was overcoated with the metal layer and finally, once again exposed to the diamond MWCVD. It was confirmed that the Ni thin films (15 nm) hinder the formation of diamond crystals resulting in the formation of an amorphous carbon layer. Contrary to this finding, the Ir layer resulted in a successful overgrowth by the fully closed diamond film. However, by employing concept 2 (ie hybrid diamond/metal/diamond composite), the thin Ir layer was found to be unstable and transferred into the isolated clusters, which were overgrown by the diamond film. Using the Au/Ir (30/15 nm) bilayer system stabilized the metallization and no diamond growth was observed on the metal layer.
Trvalý link: https://hdl.handle.net/11104/0336490