Vacuum ultraviolet photoconductive detector based on anatase TiO.sub.2./sub. thin film deposited on SiO.sub.2./sub. substrate

0566731 - FZÚ 2023 RIV NL eng C - Konferenční příspěvek (zahraniční konf.)
Cadatal-Raduban, M.M. - Olejníček, Jiří - Kohout, Michal - Yamanoi, K. - Horiuchi, Y. - Kato, T. - Ono, S.
Vacuum ultraviolet photoconductive detector based on anatase TiO₂ thin film deposited on SiO₂ substrate.
Materials Today: Proceedings. Vol. 60. Amsterdam: Elsevier Ltd., 2022, s. 1160-1164. ISSN 2214-7853.
[International Conference on Science and Engineering of Materials (ICSEM) /4./. Noida (IN), 19.07.2021-22.07.2021]
Grant CEP: GA MPO FV20580
Institucionální podpora: RVO:68378271
Klíčová slova: wide band gap * semiconductor * TiO₂ * thin film * high energy * detector
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

We report on titanium dioxide (TiO2) thin film deposited on a quartz (SiO2) substrate as an improved photoconductive detector for radiation below 200 nm wavelength (vacuum ultraviolet region, VUV). The crystalline film has an anatase phase and an average crystallite size of 10.6 nm. It has a transmission edge at 322 nm and an optical band gap of 3.18 ± 0.02 eV. Under VUV illumination, the TiO2 photoconductive detector exhibited a photocurrent of 5.3 mA at an applied bias voltage of 100 V. The dark current measured without VUV illumination and at the same bias voltage is 8.8 x 106 mA, which is 6 orders of magnitude smaller compared to the photocurrent. The photoconductive VUV detector based on TiO2 thin film provides a means of directly measuring VUV radiation compared to detection via the photoluminescence of a scintillator.
Trvalý link: https://hdl.handle.net/11104/0338020