Počet záznamů: 1  

Effect of irradiation and annealing performed with bias voltage applied across the coupling capacitors on the interstrip resistance of ATLAS ITk silicon strip sensors

  1. 1.
    0570817 - FZÚ 2024 RIV NL eng J - Článek v odborném periodiku
    Kroll, Jiří - Allport, P. P. - Chisholm, A. - Dudáš, D. - Fadeyev, V. - George, W. - Gonella, L. - Kopsalis, I. - Kvasnička, Jiří - Latoňová, Věra - Lomas, J. - Martinez-Mckinney, F. - Mikeštíková, Marcela - Shi, X. - Tůma, Pavel - Ullan, M. - Unno, Y.
    Effect of irradiation and annealing performed with bias voltage applied across the coupling capacitors on the interstrip resistance of ATLAS ITk silicon strip sensors.
    Nuclear Instruments & Methods in Physics Research Section A. Roč. 1047, Feb (2023), č. článku 167726. ISSN 0168-9002. E-ISSN 1872-9576
    Grant CEP: GA MŠMT(CZ) LTT17018; GA MŠMT(CZ) LM2018104
    Institucionální podpora: RVO:68378271
    Klíčová slova: ATLAS inner tracker * silicon strip sensors * gamma irradiation * annealing
    Obor OECD: Particles and field physics
    Impakt faktor: 1.4, rok: 2022
    Způsob publikování: Omezený přístup
    https://doi.org/10.1016/j.nima.2022.167726

    The powering configuration of the silicon strip modules developed for the new Inner Tracker of the ATLAS experiment includes a voltage of up to 0.5 V across the coupling capacitor of each individual strip. However, this voltage is usually not applied in the sensor irradiation studies due to the significant technical and logistical complications. To study the effect of an irradiation and a subsequent beneficial annealing on the strip sensors in real experimental conditions, four prototype ATLAS17LS miniature sensors were irradiated by 60Co source and annealed, both with and without the bias voltage of 0.5 V applied across the coupling capacitors. The values of interstrip resistance measured on irradiated samples before and after annealing indicate that increase of radiation damage caused by the applied voltage can be compensated by the presence of this voltage during annealing.
    Trvalý link: https://hdl.handle.net/11104/0342156

     
     
Počet záznamů: 1  

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