Title
Magnetic tunnel junction based spintronic logic and memory devices.
Abstract
The development of semiconductor devices is limited by the high power consumption
and further physical dimension reduction. Spintronic devices, especially the magnetic
tunnel junction (MTJ) based devices, have advantages of non-volatility, reconfigurable
capability, fast-switching speed, small-dimension, and compatibility to semiconductor
devices, which is a promising candidate for future logic and memory devices. However,
the previously proposed MTJ logic devices have been operated independently and
therefore are limited to only basic logic operations. Consequently, the MTJ device has
only been used as ancillary device in the circuit, rather than the main computation
component.
In this thesis, study has been done on both spintronic logic and memory devices. In the
first part, systematic study has been performed on MTJ based logic devices in order to
expand the functionalities and properties of MTJ devices. Basic logic cell with threeinput
has been designed and simulated. Nano-magnetic-channel has been proposed,
which is the first design to realize the communication between the MTJ logic cells. With
basic logic unit as a building block, a spintronic logic circuit has been designed with MTJ
as the dominant component. HSPICE simulation has been done for this spintronic logic
circuit, which acts as an Arithmetic Logic Unit. acts as an Arithmetic Logic Unit.
Description
University of Minnesota Ph.D. dissertation. November 2011. Major: Electrical engineering. Advisor: Professor Jian-Ping Wang. 1 computer file (PDF); viii, 115 pages, appendices A-D.
Suggested Citation
Yao, Xiaofeng.
(2011).
Magnetic tunnel junction based spintronic logic and memory devices..
Retrieved from the University of Minnesota Digital Conservancy,
https://hdl.handle.net/11299/119363.