Near-infrared photoluminescence and thermally stimulated current in Cu3Ga5Se9 layered crystals: A comparative study

Date

2016-07-01

Author

Hasanlı, Nızamı

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Near-infrared photoluminescence (PL) and thermally stimulated current (TSC) spectra of Cu3Ga5Se9 layered crystals grown by Bridgman method have been studied in the photon energy region of 1.35-1.46 eV and the temperature range of 15-115 K (PL) and 10-170 K (TSC). An infrared PL band centered at 1.42 eV was revealed at T = 15 K. Radiative transitions from shallow donor level placed at 20 meV to moderately deep acceptor level at 310 meV were suggested to be the reason of the observed PL band. TSC curve of Cu3Ga5Se9 crystal exhibited one broad peak at nearly 88 K. The thermal activation energy of traps was found to be 22 meV. An energy level diagram demonstrating the transitions in the crystal band gap was plotted taking account of results of PL and TSC experiments conducted below room temperature.

Subject Keywords

Semiconductors, Crystal growth, Photoluminescence spectroscopy, Optical properties, Electrical conductivity

URI

https://hdl.handle.net/11511/34741

Journal

INFRARED PHYSICS & TECHNOLOGY

DOI

https://doi.org/10.1016/j.infrared.2016.05.009

Collections

Department of Physics, Article

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Citation Formats

N. Hasanlı, “Near-infrared photoluminescence and thermally stimulated current in Cu3Ga5Se9 layered crystals: A comparative study,” INFRARED PHYSICS & TECHNOLOGY, pp. 8–11, 2016, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34741.