Decomposition of C-60 molecules on Si(100)(2 x 1) surface

Date

2000-07-01

Author

Erkoc, S
Katırcıoğlu, Şenay

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We have investigated the decomposition of C-60 molecules with low and high coverages on Si(100)(2 x 1) surface at elevated temperatures. We also investigated the decomposition of an isolated C-60 molecule. We employed molecular-dynamics simulation using a model potential. It has been found that C-60 decomposes on Si(100) surface after 1000 K in the case of low coverage (0.11), however in high coverage case (0.67), C-60 molecules decompose after 900 It. On the other hand, isolated C-60 molecule decomposes after 7500 K, interestingly it shows a phase change from 3D to 2D at higher temperatures.

Subject Keywords

Si(100) surface, C-60, MD simulation, Empirical potential

URI

https://hdl.handle.net/11511/48169

Journal

INTERNATIONAL JOURNAL OF MODERN PHYSICS C

DOI

https://doi.org/10.1142/s0129183100000900

Collections

Department of Physics, Article

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Citation Formats

S. Erkoc and Ş. Katırcıoğlu, “Decomposition of C-60 molecules on Si(100)(2 x 1) surface,” INTERNATIONAL JOURNAL OF MODERN PHYSICS C, pp. 1067–1076, 2000, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48169.