Admittance Analysis of Thermally Evaporated Hole Selective MoO3 on Crystalline Silicon

Date

2016-11-14

Author

Ahiboz, Doğuşcan
Nasser, Hısham
Turan, Raşit

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Integration of stoichiometric molybdenum trioxide (MoO 3-x ) as an effective hole transport layer (HTL) in solar cells is expected to reduce fabrication cost by eliminating the high temperature processes while maintaining high conversion efficiency. In this work we performed a systematic study to extract the electronic properties of vapor-phase deposited MoO 3-x thin film and MoO 3-x /crystalline silicon interface through capacitance and conductance analysis. Effect of MoO 3-x thickness as well as post deposition annealing on series resistance, electrical response, interface and bulk trapped oxide charges were profoundly examined and determined. Moreover, variation in series resistance, behavior of the interface and bulk trapped charges were revealed. Finally, frequency and bias voltage dependence of the series resistance and interface trapped charge were determined.

Subject Keywords

Sub-stoichiometric molybdenum trioxide, Molybdenum trioxide MOS capacitor, Hole selective layer, Capacitance (C-V), Conductance (G-V)

URI

https://hdl.handle.net/11511/77234
https://ieeexplore.ieee.org/document/7983991

DOI

https://doi.org/10.1109/IRSEC.2016.7983991

Conference Name

2016 International Renewable and Sustainable Energy Conference (IRSEC)

Collections

Department of Physics, Conference / Seminar

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Citation Formats

D. Ahiboz, H. Nasser, and R. Turan, “Admittance Analysis of Thermally Evaporated Hole Selective MoO3 on Crystalline Silicon,” presented at the 2016 International Renewable and Sustainable Energy Conference (IRSEC), Marrakech, Morocco, 2016, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/77234.