Device Behavior Of CZTSe/Si Nanowire Heterojunction

Date

2017-10-28

Author

Sürücü, Gökhan
Bayraklı, Özge
Güllü, Hasan Hüseyin
Terlemezoğlu, Makbule
Parlak, Mehmet

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URI

https://hdl.handle.net/11511/77768

Conference Name

Photovoltaic Technical Conference

Collections

Department of Physics, Conference / Seminar

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Device Characterization of Zn Sn Se ZTSe Thin Films for Solar Cells T P2 69 Bayraklı, Özge; Güllü, Hasan Hüseyin; Coşkun, Emre; Parlak, Mehmet (2016-05-05)
Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode Coskun, EMRE; Gullu, H. H.; CANDAN, İDRİS; Bayrakli, O.; Parlak, Mehmet; Ercelebi, C. (2015-06-01) In this work, p-(Ag-Ga-In-Te) polycrystalline thin films were deposited on soda-lime glass and n-type Si substrates by e-beam evaporation of AgGa0.5In0.5Te2 crystalline powder and the thermal evaporation of Ag powder, sequentially in the same chamber. The carrier concentration and mobility of the Ag-Ga-In-Te (AGIT) film were determined as 5.82 x 10(15) cm(-3) and 13.81 cm(2)/(V s) as a result of Hall Effect measurement. The optical analysis indicated that the band gap values of the samples were around 1.58 ...
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Citation Formats

G. Sürücü, Ö. Bayraklı, H. H. Güllü, M. Terlemezoğlu, and M. Parlak, “Device Behavior Of CZTSe/Si Nanowire Heterojunction,” presented at the Photovoltaic Technical Conference, 2017, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/77768.