Growth and oxidization stability of cubic Zr1-xGdxN solid solution thin films

Höglund, Carina; Alling, Björn; Jensen, Jens M.; Hultman, Lars; Birch, Jens; Hall-Wilton, Richard John

doi:10.1063/1.4921167

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Growth and oxidization stability of cubic Zr_1-xGd_xN solid solution thin films

MPS-Authors

/persons/resource/persons195051

Alling, Björn
Adaptive Structural Materials (Simulation), Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;
Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linköping University, Linköping, Sweden;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Höglund, C., Alling, B., Jensen, J. M., Hultman, L., Birch, J., & Hall-Wilton, R. J. (2015). Growth and oxidization stability of cubic Zr_1-xGd_xN solid solution thin films. Journal of Applied Physics, 117(19): 195301. doi:10.1063/1.4921167.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002A-584E-A

Abstract

We report Zr1-xGdxN thin films deposited by magnetron sputter deposition. We show a solid solubility of the highly neutron absorbing GdN into ZrN along the whole compositional range, which is in excellent agreement with our recent predictions by first-principles calculations. An oxidization study in air shows that Zr1-xGdxN with x reaching from 1 to close to 0 fully oxidizes, but that the oxidization is slowed down by an increased amount of ZrN or stopped by applying a capping layer of ZrN. The crystalline quality of Zr0.5Gd0.5N films increases with substrate temperatures increasing from 100 degrees C to 900 degrees C. (C) 2015 Author(s).