Recent experimental investigations into charge transfer during ion/semiconductor surface collisions indicate dependence of the scattered ion's neutralization probability upon the target surface's local electronic environment along the scattered ion trajectory. This work presents qualitative modeling of these experiments demonstrating how the target surface's local electrostatic potential and charge density modify the scattered ion's neutralization rates. These models have been applied to Ne+ scattering and S- recoil from CdS {0001} and {0001¯} surfaces as well as Ne + scattering from intrinsic, n- and p-doped Si(100)-(2x1) surfaces. Correlation between electrostatic surface potential and ion neutralization probability has been shown for ion scattering from the CdS surfaces. Ne + neutralization during scattering from the Si(100)-(2x1) surface correlates to local surface charge density along the ion trajectory. Variations in ion neutralization rate for the intrinsic, n- and p-doped surfaces have been correlated to band bending at the Si surface.