Graduate Thesis Or Dissertation
 

Development of Temperature-Stable Relaxor Dielectrics for High Energy Density Capacitor Applications

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https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/5d86p361f

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  • High performance dielectric materials are needed for high power SiC- or GaN-based electronics which combine the best features of high energy density, low dielectric loss and high reliability and for advanced high-speed and high-voltage energy storage where temperature stability plays an important role in material properties. An ideal capacitor for these systems features temperature-stable permittivity characteristics, a maximum permittivity near or below 0 °C, and sufficiently high permittivity to have practical application. This work involves the synthesis, processing, characterization, testing, and evaluating of the perovskite compositions BaTiO₃-Bi(Zn₁/₂Ti₁/₂)O₃BiScO₃-NaNbO₃, BaTiO₃-Bi(Zn₁/₂Ti₁/₂)O₃-Pb(Mg₁/₃Nb₂/₃)O₃, and BaTiO₃Bi(Zn₁/₂Ti₁/₂)O₃-Pb(Ni₁/₃Nb₂/₃)O₃, all of which were investigated as possible linear dielectric capacitor materials. These materials have excellent dielectric properties due to a relaxor dielectric mechanism which is derived from B-site cation disorder. The characteristic diffuse phase transition observed in relaxor materials allows for a large temperature range of operation. These systems have been shown to have facile synthesis routes, creating single-phase solid solutions. The compositions studied have provided a framework for future work which would involve compositional modifications aimed at increasing the relative permittivity which would allow further device miniaturization as well characterization of the dielectric properties at high electric fields (E > 100 kV/cm).
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