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This item was automatically migrated from a legacy system. It's data has not been checked and might not meet the quality criteria of the present system.
Record link:
http://hdl.handle.net/20.500.12708/171457
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Title:
Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices
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Citation:
Ayalew, T., Grasser, T., Kosina, H., & Selberherr, S. (2005). Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices.
Materials Science Forum
,
483–485
, 845–848. https://doi.org/10.4028/www.scientific.net/msf.483-485.845
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Publisher DOI:
10.4028/www.scientific.net/msf.483-485.845
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CatalogPlus:
AC05935291
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Publication Type:
Article - Original Research Article
en
Authors:
Ayalew, T.
Grasser, T.
Kosina, H.
Selberherr, Siegfried
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Organisational Unit:
E360 - Institut für Mikroelektronik
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ISSN:
0255-5476
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Date (published):
2005
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Number of Pages:
4
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Peer reviewed:
No
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Keywords:
Mechanical Engineering; Mechanics of Materials; Condensed Matter Physics; General Materials Science
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Project title:
TCAD Mikroelektronik - Christian Doppler Laboratorium Technologie-CAD in der Mikroelektronik
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Science Branch:
Elektrotechnik, Elektronik
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Appears in Collections:
Article
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