Resonant amplification via Er-doped clad Si photonic molecules : towards compact low-loss/high-Q Si photonic devices

Resonant amplification via Er-doped clad Si photonic molecules : towards compact low-loss/high-Q Si photonic devices

P. F. Jarschel, N. C. Frateschi

ARTIGO

Inglês

Agradecimentos: This work was supported in part by the Sao Paulo Research Foundation (FAPESP) under Grant 08/57857-2 and Grant 2014/04748-2, and in part by the National Council for Scientific and Technological Development (CNPq) under Grant 574017/2008-9. The authors would also like to thank the...

Abstract: Silicon photonics routers and band-pass filters employing ring resonators are usually constrained by a trade-off between quality factors and insertion loss, which is even more pronounced in compact designs. Device real estate is another factor to be considered for compactness and cost...

CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ

574017/2008-9

FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP

08/57857-2; 2014/04748-2

Fechado

Resonant amplification via Er-doped clad Si photonic molecules : towards compact low-loss/high-Q Si photonic devices

P. F. Jarschel, N. C. Frateschi

										

Resonant amplification via Er-doped clad Si photonic molecules : towards compact low-loss/high-Q Si photonic devices

P. F. Jarschel, N. C. Frateschi

    Fontes

    Solid-state electronics. An international journal

    Vol. 155 (May, 2019), p. 144-149