Resonant amplification via Er-doped clad Si photonic molecules : towards compact low-loss/high-Q Si photonic devices
ARTIGO
Inglês
Agradecimentos: This work was supported in part by the Sao Paulo Research Foundation (FAPESP) under Grant 08/57857-2 and Grant 2014/04748-2, and in part by the National Council for Scientific and Technological Development (CNPq) under Grant 574017/2008-9. The authors would also like to thank the...
Agradecimentos: This work was supported in part by the Sao Paulo Research Foundation (FAPESP) under Grant 08/57857-2 and Grant 2014/04748-2, and in part by the National Council for Scientific and Technological Development (CNPq) under Grant 574017/2008-9. The authors would also like to thank the colleagues from the Gleb Wataghin Physics Institute for the valuable discussions
Abstract: Silicon photonics routers and band-pass filters employing ring resonators are usually constrained by a trade-off between quality factors and insertion loss, which is even more pronounced in compact designs. Device real estate is another factor to be considered for compactness and cost...
Abstract: Silicon photonics routers and band-pass filters employing ring resonators are usually constrained by a trade-off between quality factors and insertion loss, which is even more pronounced in compact designs. Device real estate is another factor to be considered for compactness and cost reduction. We propose an approach to simultaneously reduce insertion losses and increase the quality factor in such devices, while minimizing footprint. This approach consists in replacing the standard SiO2 top cladding of Si devices by erbium-doped Al2O3 films with a single post-processing step. Experimental results confirm the effectiveness of the method, where 1 dB output power increase is observed for a single ring device, in addition to an increase of 5% in the Q factor. In some cases of structures comprised of multiple coupled resonators, i.e., photonic molecules, the observed value of power increase is as high as 2.6 dB, with a Q factor increase of 25% and loss reduction of 3 dB
CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ
574017/2008-9
FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP
08/57857-2; 2014/04748-2
Fechado
Resonant amplification via Er-doped clad Si photonic molecules : towards compact low-loss/high-Q Si photonic devices
Resonant amplification via Er-doped clad Si photonic molecules : towards compact low-loss/high-Q Si photonic devices
Fontes
Solid-state electronics. An international journal Vol. 155 (May, 2019), p. 144-149 |