Thermoelastic analysis of a silicon surface under X-ray free-electron-laser irradiation

Thermoelastic analysis of a silicon surface under X-ray free-electron-laser irradiation

A. R. B. de Castro, Áurea R. Vasconcellos, Roberto Luzzi

ARTIGO

Inglês

Agradecimentos: The authors acknowledge financial support from the State of São Paulo Research Agency FAPESP under Grant Nos. 05/56324 and 06/56456. One of the authors (A.R.B.C) benefited from many discussions with Thomas Möller and his group (TU Berlin), which motivated this study, and gratefully...

Abstract: We present an analysis of the time evolution of a highly excited silicon substrate after partial absorption of a femtosecond soft x-ray pulse. The detailed time-dependent thermoelastic behavior of the substrate in terms of the displacements u(r,t) is derived for time delays for which the...

FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP

05/56324; 06/56456

Fechado

Thermoelastic analysis of a silicon surface under X-ray free-electron-laser irradiation

A. R. B. de Castro, Áurea R. Vasconcellos, Roberto Luzzi

										

Thermoelastic analysis of a silicon surface under X-ray free-electron-laser irradiation

A. R. B. de Castro, Áurea R. Vasconcellos, Roberto Luzzi

    Fontes

    Review of scientific instruments

    Vol. 81, n. 7 (July, 2010), n. art. 073102, p. 1-12