Abstract: A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC underthe influence of high electricfields is presented. It is based on a nonlinear quantum kinetic theory which pro-vides a clear description of the dissipative phenomena that are...

Abstract: A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC underthe influence of high electricfields is presented. It is based on a nonlinear quantum kinetic theory which pro-vides a clear description of the dissipative phenomena that are evolving in the system. The hole drift velocity andthe nonequilibrium temperature are obtained, and their dependence on the electricfield strength is derived andanalyzed

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