Agradecimentos: We thank the Brazilian agencies: Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP, grant nr. 03/12775-5), Conselho Nacional de Desenvolvimento Científico (CNPq), Comissão de Aperfeiçoamento do Pessoal de Nível Superior (CAPES) and Fundação para o Desenvolvimento da UNESP...

Agradecimentos: We thank the Brazilian agencies: Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP, grant nr. 03/12775-5), Conselho Nacional de Desenvolvimento Científico (CNPq), Comissão de Aperfeiçoamento do Pessoal de Nível Superior (CAPES) and Fundação para o Desenvolvimento da UNESP (FUNDUNESP) for financial support. Thanks are also due to: the Centro de Componentes Semicondutores (CCS) for the use of the ion implanter, and to Mr. J. E. C. Queiroz for technical assistance, to the Laboratory for the Analysis of Materials by Ion Beams for the RBS measurements and to Dr. M. B. Dupret for data acquisition, as well as to Prof. F. Alvarez and Dr. F. Zagonel for the nanoindentation experiments

Abstract: Polymer films synthesized from plasmas of a tetramethylsilane - Ar mixture were modified by irradiation with 170 keV He ions at fluences ranging from 1 x 10(14) to 1 x 10(16) cm(-2). As revealed by infrared spectroscopy, the ion beam produced intense bond rearrangements, such as the...

Abstract: Polymer films synthesized from plasmas of a tetramethylsilane - Ar mixture were modified by irradiation with 170 keV He ions at fluences ranging from 1 x 10(14) to 1 x 10(16) cm(-2). As revealed by infrared spectroscopy, the ion beam produced intense bond rearrangements, such as the depletion of bonding groups (C-H and Si-H), and induced the formation of new ones, such as O-H and Si-O. From the nanoindentation measurements, a remarkable increase in the surface hardness of the films was observed as the ion fluence was increased. The increases in hardness were accompanied by an increase in the film compaction as shown by using a combination of RBS and film thickness measurements. From both hardness and infrared measurements A was concluded that, under the He ion bombardment, the polymer structure is transformed into a silicon oxycarbide network

FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP

03/12775-5

CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ

COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES

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