Article (Scientific journals)
Hall Effect Measurements Probing the Degree of Charge-Carrier Delocalization in Solution-Processed Crystalline Molecular Semiconductors
Chang, J.F.; Sakanoue, T.; Olivier, Yoann et al.
2011In Physical Review Letters, 107, p. 066601
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Disciplines :
Physics
Author, co-author :
Chang, J.F.
Sakanoue, T.
Olivier, Yoann ;  Université de Mons > Faculté des Sciences > Chimie des matériaux nouveaux
Uemera, T.
Dufourg-Madec, M.B.
Yeates, S.G.
Cornil, Jérôme ;  Université de Mons > Faculté des Sciences > Chimie des matériaux nouveaux
Takeya, J.
Troisi, A.
Sirringhaus, H.
Language :
English
Title :
Hall Effect Measurements Probing the Degree of Charge-Carrier Delocalization in Solution-Processed Crystalline Molecular Semiconductors
Publication date :
25 May 2011
Journal title :
Physical Review Letters
ISSN :
0031-9007
Publisher :
American Physical Society, New York, United States - New York
Volume :
107
Pages :
066601
Peer reviewed :
Peer Reviewed verified by ORBi
Research unit :
S817 - Chimie des matériaux nouveaux
Research institute :
R400 - Institut de Recherche en Science et Ingénierie des Matériaux
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