Characterization of SiC buffer layer formation by reaction of Si(100) surface with methane+hydrogen plasma

Bittencourt, Carla

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Characterization of SiC buffer layer formation by reaction of Si(100) surface with methane+hydrogen plasma

Bittencourt, Carla

2000 • In Surface and Interface Analysis, 30 (1), p. 603-606

Peer Reviewed verified by ORBi

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https://hdl.handle.net/20.500.12907/22038

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Research center :

CIRMAP - Centre d'Innovation et de Recherche en Matériaux Polymères

Disciplines :

Chemistry
Physics

Author, co-author :

Bittencourt, Carla

Language :

English

Title :

Characterization of SiC buffer layer formation by reaction of Si(100) surface with methane+hydrogen plasma

Publication date :

30 November 2000

Journal title :

Surface and Interface Analysis

ISSN :

0142-2421

Publisher :

John Wiley & Sons, Hoboken, United States - New Jersey

Volume :

Issue :

Pages :

603-606

Peer reviewed :

Peer Reviewed verified by ORBi

Research unit :

S882 - Chimie des Interactions Plasma-Surface

Research institute :

R400 - Institut de Recherche en Science et Ingénierie des Matériaux

Available on ORBi UMONS :

since 30 November 2013

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