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https://hdl.handle.net/20.500.14094/90004579
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2024-04-23
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90004579 (fulltext)
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メタデータID
90004579
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open access
出版タイプ
Version of Record
タイトル
Photoluminescence enhancement of silicon quantum dot monolayer by plasmonic substrate fabricated by nano-imprint lithography
著者
Yanagawa, Hiroto ; Inoue, Asuka ; Sugimoto, Hiroshi ; Shioi, Masahiko ; Fujii, Minoru
著者名
Yanagawa, Hiroto
著者名
Inoue, Asuka
著者ID
A2035
研究者ID
1000040793998
KUID
https://kuid-rm-web.ofc.kobe-u.ac.jp/search/detail?systemId=ea5d85f0a07a9354520e17560c007669
著者名
Sugimoto, Hiroshi
杉本, 泰
スギモト, ヒロシ
所属機関名
工学研究科
著者名
Shioi, Masahiko
著者ID
A1198
研究者ID
1000000273798
KUID
https://kuid-rm-web.ofc.kobe-u.ac.jp/search/detail?systemId=c329d986b41188dd520e17560c007669
著者名
Fujii, Minoru
藤井, 稔
フジイ, ミノル
所属機関名
工学研究科
収録物名
Journal of Applied Physics
巻(号)
122(22)
ページ
223101-223101
出版者
AIP Publishing
刊行日
2017-12-14
公開日
2019-01-01
抄録
Near-field coupling between a silicon quantum dot (Si-QD) monolayer and a plasmonic substrate fabricated by nano-imprint lithography and having broad multiple resonances in the near-infrared (NIR) window of biological substances was studied by precisely controlling the QDs-substrate distance. A strong enhancement of the NIR photoluminescence (PL) of Si-QDs was observed. Detailed analyses of the PL and PL excitation spectra, the PL decay dynamics, and the reflectance spectra revealed that both the excitation cross-sections and the emission rates are enhanced by the surface plasmon resonances, thanks to the broad multiple resonances of the plasmonic substrate, and that the relative contribution of the two enhancement processes depends strongly on the excitation wavelength. Under excitation by short wavelength photons (405 nm), where enhancement of the excitation cross-section is not expected, the maximum enhancement was obtained when the QDs-substrate distance was around 30 nm. On the other hand, under long wavelength excitation (641 nm), where strong excitation cross-section enhancement is expected, the largest enhancement was obtained when the distance was minimum (around 1 nm). The achievement of efficient excitation of NIR luminescence of Si-QDs by long wavelength photons paves the way for the development of Si-QD-based fluorescence bio-sensing devices with a high bound-to-free ratio.
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工学研究科
学術雑誌論文
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©2017 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 122(22), 223101 and may be found at http://dx.doi.org/10.1063/1.5001106
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資源タイプ
journal article
言語
English (英語)
ISSN
0021-8979
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eISSN
1089-7550
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関連情報
DOI
https://doi.org/10.1063/1.5001106
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