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https://hdl.handle.net/20.500.14094/90004899
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2024-04-19
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90004899 (fulltext)
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90004899
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open access
出版タイプ
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タイトル
Negligible Electronic Interaction between Photoexcited Electron-Hole Pairs and Free Electrons in Phosphorus-Boron Co-Doped Silicon Nanocrystals
著者
Limpens, Rens ; Fujii, Minoru ; Neale, Nathan R. ; Gregorkiewicz, Tom
著者名
Limpens, Rens
著者ID
A1198
研究者ID
1000000273798
KUID
https://kuid-rm-web.ofc.kobe-u.ac.jp/search/detail?systemId=c329d986b41188dd520e17560c007669
著者名
Fujii, Minoru
藤井, 稔
フジイ, ミノル
所属機関名
工学研究科
著者名
Neale, Nathan R.
著者名
Gregorkiewicz, Tom
収録物名
Journal of Physical Chemistry C
巻(号)
122(11)
ページ
6397-6404
出版者
American Chemical Society
刊行日
2018-03-22
公開日
2018-05-29
抄録
Phosphorus (P) and boron (B) co-doped Si nanocrystals (NCs) have raised interest in the optoelectronic industry due to their electronic tunability, optimal carrier multiplication properties, and straightforward dispersibility in polar solvents. Yet a basic understanding of the interaction of photoexcited electron-hole (e-h) pairs with new physical features that are introduced by the co-doping process (free carriers, defect states, and surface chemistry) is missing. Here, we present the first study of the ultrafast carrier dynamics in SiO2-embedded P-B co-doped Si NC ensembles using induced absorption spectroscopy through a two-step approach. First, the induced absorption data show that the large fraction of the dopants residing on the NC surface slows down carrier relaxation dynamics within the first 20 ps relative to intrinsic (undoped) Si NCs, which we interpret as enhanced surface passivation. On longer time-scales (picosecond to nanosecond regime), we observe a speeding up of the carrier relaxation dynamics and ascribe it to doping-induced trap states. This argument is deduced from the second part of the study, where we investigate multiexciton interactions. From a stochastic modeling approach we show that localized carriers, which are introduced by the P or B dopants, have minor electronic interactions with the photoexcited e-h pairs. This is understood in light of the strong localization of the introduced carriers on their original P- or B-dopant atoms, due to the strong quantum confinement regime in these relatively small NCs (<6 nm).
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工学研究科
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© 2018 American Chemical Society.
This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes.
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journal article
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English (英語)
ISSN
1932-7447
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eISSN
1932-7455
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NCID
AA1217589X
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関連情報
DOI
https://doi.org/10.1021/acs.jpcc.7b12313
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