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Correlations between plasma variables and the deposition process of Si films from chlorosilanes in low pressure RF plasma of argon and hydrogenThe dissociation of chlorosilanes to silicon and its deposition on a solid substrate in a RF plasma of mixtures of argon and hydrogen were investigated as a function of the macrovariables of the plasma. The dissociation mechanism of chlorosilanes and HCl as well as the formation of Si in the plasma state were studied by sampling the plasma with a quadrupole mass spectrometer. Macrovariables such as pressure, net RF power input and locations in the plasma reactor strongly influence the kinetics of dissociation. The deposition process of microcrystalline silicon films and its chlorine contamination were correlated to the dissociation mechanism of chlorosilanes and HCl.
Document ID
19840013262
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Avni, R. (NASA Lewis Research Center Cleveland, OH, United States)
Carmi, U. (Nuclear Research Center Negev Beer Sheva, Israel)
Grill, A. (Ben Gurion University of the Negev Beer Sheva, Israel)
Manory, R. (Ben Gurion University of the Negev Beer Sheva, Israel)
Grossman, E. (Ben Gurion University of the Negev Beer Sheva, Israel)
Date Acquired
September 4, 2013
Publication Date
April 13, 1984
Subject Category
Plasma Physics
Report/Patent Number
NAS 1.15:83603
E-2020
NASA-TM-83603
Meeting Information
Meeting: Intern. on Met. Coatings
Location: San Diego, CA
Country: United States
Start Date: July 24, 1983
End Date: July 28, 1983
Sponsors: American Vacuum Society
Accession Number
84N21330
Funding Number(s)
PROJECT: RTOP 506-53-1B
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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