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Journal Article

Calculated atomic structures and electronic properties of GaP, InP, GaAs and InAs(110) surfaces

MPS-Authors
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Alves,  José Luiz A.
Theory, Fritz Haber Institute, Max Planck Society;

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Hebenstreit,  J.
Theory, Fritz Haber Institute, Max Planck Society;

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Scheffler,  M.
Theory, Fritz Haber Institute, Max Planck Society;

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PRB-44-6188-1991.pdf
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Citation

Alves, J. L. A., Hebenstreit, J., & Scheffler, M. (1991). Calculated atomic structures and electronic properties of GaP, InP, GaAs and InAs(110) surfaces. Physical Review B, 44(12), 6188-6198. doi:10.1103/PhysRevB.44.6188.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-226A-9
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