Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator

Rosa, Priscila; Xu, Yuanfeng; Rahn, Marein; Souza, Jean; Kushwaha, Satya; Veiga, Larissa; Bombardi, Alessandro; Thomas, Sean; Janoschek, Marc; Bauer, Eric; Chan, Mun; Wang, Zhijun; Thompson, Joe; Harrison, Neil; Pagliuso, Pascoal; Bernevig, B. Andrei; Ronning, Filip

doi:10.1038/s41535-020-00256-8

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Journal Article

Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator

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Xu, Yuanfeng
Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://doi.org/10.1038/s41535-020-00256-8
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Citation

Rosa, P., Xu, Y., Rahn, M., Souza, J., Kushwaha, S., Veiga, L., et al. (2020). Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator. npj Quantum Materials, 5(1): 52. doi:10.1038/s41535-020-00256-8.

Cite as: https://hdl.handle.net/21.11116/0000-0008-A856-A

Abstract

Here we investigate antiferromagnetic Eu5In2Sb6, a nonsymmorphic Zintl phase. Our electrical transport data show that Eu5In2Sb6 is remarkably insulating and exhibits an exceptionally large negative magnetoresistance, which is consistent with the presence of magnetic polarons. From ab initio calculations, the paramagnetic state of Eu5In2Sb6 is a topologically nontrivial semimetal within the generalized gradient approximation (GGA), whereas an insulating state with trivial topological indices is obtained using a modified Becke−Johnson potential. Notably, GGA + U calculations suggest that the antiferromagnetic phase of Eu5In2Sb6 may host an axion insulating state. Our results provide important feedback for theories of topological classification and highlight the potential of realizing clean magnetic narrow-gap semiconductors in Zintl materials.