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Conference Paper

Fully integrated silicon photonic circuit technology with SiN passives, Ge photodetectors and III- V/Si SOAs

MPS-Authors
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Poon,  Joyce K. S.       
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://ieeexplore.ieee.org/document/9979510
(Publisher version)

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Citation

Peyrou, M., Mak, J., Thiessen, T., Froberger, K., Denis-Le Coarer, F., Yong, Z., et al. (2022). Fully integrated silicon photonic circuit technology with SiN passives, Ge photodetectors and III- V/Si SOAs. In 2022 European Conference on Optical Communication (ECOC).


Cite as: https://hdl.handle.net/21.11116/0000-000D-335D-2
Abstract
We present for the first time a fully integrated silicon photonic circuit technology. III-V on Si amplifiers are monolithically integrated at the backside of advanced Silicon photonic wafers comprising SiN passive devices, Si based phase shifters and Ge waveguide-photodetectors.