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学術論文

Atomistic Simulations of Dislocation-Void Interactions in Concentrated Solid Solution Alloys

MPS-Authors

Vaid,  Aviral
Microstructure and Mechanics, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Bitzek,  Erik
Microstructure and Mechanics, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;
Department of Materials Science and Engineering, Institute i, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Erlangen, Germany;

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metals-13-01655.pdf
(出版社版), 6MB

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引用

Vaid, A., Zaiser, M., & Bitzek, E. (2023). Atomistic Simulations of Dislocation-Void Interactions in Concentrated Solid Solution Alloys. Metals, 13(10):. doi:10.3390/met13101655.


引用: https://hdl.handle.net/21.11116/0000-000E-7FA6-9
要旨
This paper investigates the interaction of edge dislocations with voids in concentrated solid solution alloys (CSAs) using atomistic simulations. The simulation setup consists of edge dislocations with different periodicity lengths and a periodic array of voids as obstacles to dislocation motion. The critical resolved shear stress (CRSS) for dislocation motion is determined by static simulations bracketing the applied shear stress. The results show that shorter dislocation lengths and the presence of voids increase the CRSS for dislocation motion. The dislocation–void interaction is found to follow an Orowan-like mechanism, where partial dislocation arms mutually annihilate each other to overcome the void. Solute strengthening produces a ‘friction stress’ that adds to the Orowan stress. At variance with classical theories of solute pinning, this stress must be considered a function of the dislocation line length, in line with the idea that geometrical constraints synergetically enhance the pinning action of solutes. Modifying the equation by Bacon, Kocks and Scattergood for void strengthening to account for the solute hardening in CSAs allows one to quantitatively predict the CRSS in the presence of voids and its dependency on void spacing. The predictions show good agreement with the simulation data without invoking any fit parameters.